Selective area growth of III/V materials in metalorganic molecular beam epitaxy (chemical beam epitaxy)HEINECKE, H.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 18-28, issn 0022-0248Conference Paper

Surface reactivity and stability of Ga-deposited GaAs oxide mask for selective area growth of GaAsSASAKI, M; YOSHIDA, S.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 241-245, issn 0022-0248Conference Paper

GRADED-BAND-GAP PGA_1-XAL_XAS-NGAAS HETEROJUNCTION SOLAR CELLS.KONAGAI M; TAKAHASHI K.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 8; PP. 3542-3546; BIBL. 9 REF.Article

HIGH EFFICIENT GRADED-BANDGAP PGA_1-XAL_XAS-PGAAS-NGAAS SOLAR CELLS.KONAGAI M; TAKAHASHI K.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 98Conference Paper

AMORPHOUS SI-F-H SOLAR CELLS PREPARED BY DC GLOW DISCHARGEKONAGAI M; TAKAHASHI K.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 7; PP. 599-601; BIBL. 9 REF.Article

THEORETICAL ANALYSIS OF GRADED-BAND-GAP GALLIUM-ALUMINIUM ARSENIDE/GALLIUM ARSENIDE P-GA_1-XAL_XAS/P-GAAS/N-GAAS SOLAR CELLS. = ANALYSE THEORIQUE DES CELLULES SOLAIRES DE TYPE GALLIUM-ARSENIURE D'ALUMINIUM/ARSENIURE DE GALLIUM P-GA_1-XAL_XAS/P-GAAS/N-GAAS AVEC ECARTS DE BANDES GRADUESKONAGAI M; TAKAHASHI K.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 3; PP. 259-264; BIBL. 17 REF.Article

(GAAL) AS-GAAS HETEROJUNCTION TRANSISTORS WITH HIGH INJECTION EFFICIENCY. = TRANSISTORS A HETEROJONCTION (GAAL) AS-GAAS AVEC HAUT RENDEMENT D'INJECTIONKONAGAI M; TAKAHASHI K.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 5; PP. 2120-2124; BIBL. 11 REF.Article

Evidence for non-hydrogen desorption limited growth of Si from disilane at very low temperatures in gas source molecular beam epitaxy ?WERNER, K; BUTZKE, S; RADELAAR, S et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 338-343, issn 0022-0248Conference Paper

Selective-area epitaxy of GaAs using a GaN mask in in-situ processesYOSHIDA, S; SASAKI, M; KAWANISHI, H et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 37-41, issn 0022-0248Conference Paper

Theoretical consideration on the metalorganic molecular beam epitaxy growth mechanism of III-V semiconductors by molecular orbital calculationOKUNO, Y; ASAHI, H; GONDA, S et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 83-88, issn 0022-0248Conference Paper

In-situ probing of the ZnSe metalorganic molecular beam epitaxy growth process by surface photo-interference methodTOKITA, S; KOBAYASHI, M; YOSHIKAWA, A et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 376-380, issn 0022-0248Conference Paper

Optical properties of InGaAs/InP double-heterostructures selectively grown by chemical beam epitaxyGOTODA, M; NOMURA, Y; ISU, T et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 246-249, issn 0022-0248Conference Paper

Ab initio study on the reaction of trimethylgallium with hydrogen moleculeHIRAOKA, Y. S; MASHITA, M.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 94-98, issn 0022-0248Conference Paper

Chemical beam epitaxy as a breakthrough technology for photovoltaic solar energy applicationsYAMAGUCHI, M; WARABISAKO, T; SUGIURA, H et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 29-36, issn 0022-0248Conference Paper

Determination of the sticking coefficient of disilane on Si(001) using the first reflection high energy electron diffraction oscillation periodWERNER, K; BUTZKE, S; RADELAAR, S et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 322-327, issn 0022-0248Conference Paper

Electroabsorption and modulator characteristics of InGaAsP multiple quantum well laser structures grown by laser-assisted metalorganic molecular beam epitaxySUGIURA, H; WAKITA, K; IGA, R et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 64-68, issn 0022-0248Conference Paper

Short-pulse chemical beam epitaxySUIAN ZHANG; JIE CUI; TANAKA, A et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 200-203, issn 0022-0248Conference Paper

Surface emitting lasers grown by chemical beam epitaxyMIYAMOTO, T; UCHIDA, T; YOKOUCHI, N et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 210-215, issn 0022-0248Conference Paper

A Si_1-xGe_x/Si single quantum well p-i-n structure grown by solid-source and gas-source hybrid Si molecular beam epitaxyKATO, Y; FUKATSU, S; USAMI, N et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 355-360, issn 0022-0248Conference Paper

In-situ dry etching of InP using phosphorus trichloride and regrowth inside a chemical beam epitaxial growth chamberTSANG, W. T; KAPRE, R; SCIORTINO, P. F et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 42-49, issn 0022-0248Conference Paper

Hydrogen desorption rate and surface hydrogen coverage during isothermal annealing for Si₂H₆-adsorbed Si(100) surfacesHORIE, T; TAKAKUWA, Y; YAMAGUCHI, T et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 344-348, issn 0022-0248Conference Paper

In-situ reflection high-energy electron diffraction observation of laser-triggered GaP growth in chemical beam epitaxyYOSHIMOTO, M; HASHIMOTO, T; VACCARO, P et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 89-93, issn 0022-0248Conference Paper

Morphology on GaAs surfaces growth by metalorganic chemical vapor deposition and molecular beam epitaxyIKUTA, K; OSAKA, J; YOKOYAMA, H et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 114-117, issn 0022-0248Conference Paper

Reflection high energy electron diffraction and reflectance difference studies of surface anisotropy in InGaAs chemical beam epitaxy on flat and vicinal (001)GaAsJUNNO, B; PAULSSON, G; MILLER, M et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 78-82, issn 0022-0248Conference Paper

Si dangling bonds on Si(100) surface during gas-source molecular beam epitaxy with Si₂H₆TAKAKUWA, Y; YAMAGUCHI, T; MIYAMOTO, N et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 328-332, issn 0022-0248Conference Paper